• DocumentCode
    2394149
  • Title

    Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems

  • Author

    Kita, K. ; Sasagawa, M. ; Tomida, K. ; Tohyama, M. ; Kyuno, K. ; Toriumi, A.

  • Author_Institution
    Dept. of Mater. Sci., Tokyo Univ., Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    186
  • Lastpage
    191
  • Abstract
    In this paper, we describe a comprehensive comparision between Ge/HfO/sub 2/ and Si/HfO/sub 2/ system through physical and electrical properties.
  • Keywords
    Fourier transform spectra; MOS capacitors; X-ray reflection; dielectric materials; dielectric thin films; ellipsometry; hafnium compounds; infrared spectra; transmission electron microscopy; Ge-HfO/sub 2/; Ge/HfO/sub 2/ MOS system; Si-HfO/sub 2/; Si/HfO/sub 2/ MOS system; electrical properties; equivalent oxide thickness; physical properties; Annealing; Argon; Chemical analysis; Hafnium oxide; Human computer interaction; Nose; Semiconductor films; Sputtering; Substrates; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159209
  • Filename
    1252534
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2394149