مرکز منطقه ای اطلاع رساني علوم و فناوري - Further EOT scaling of Ge/HfO<sub>2</sub> over Si/HfO<sub>2</sub> MOS systems

DocumentCode :

2394149

Title :

Further EOT scaling of Ge/HfO₂ over Si/HfO₂ MOS systems

Author :

Kita, K. ; Sasagawa, M. ; Tomida, K. ; Tohyama, M. ; Kyuno, K. ; Toriumi, A.

Author_Institution :

Dept. of Mater. Sci., Tokyo Univ., Japan

fYear :

2003

fDate :

6-7 Nov. 2003

Firstpage :

186

Lastpage :

191

Abstract :

In this paper, we describe a comprehensive comparision between Ge/HfO/sub 2/ and Si/HfO/sub 2/ system through physical and electrical properties.

Keywords :

Fourier transform spectra; MOS capacitors; X-ray reflection; dielectric materials; dielectric thin films; ellipsometry; hafnium compounds; infrared spectra; transmission electron microscopy; Ge-HfO/sub 2/; Ge/HfO/sub 2/ MOS system; Si-HfO/sub 2/; Si/HfO/sub 2/ MOS system; electrical properties; equivalent oxide thickness; physical properties; Annealing; Argon; Chemical analysis; Hafnium oxide; Human computer interaction; Nose; Semiconductor films; Sputtering; Substrates; Thickness measurement;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on

Conference_Location :

Toyko, Japan

Print_ISBN :

4-89114-037-2

Type :

conf

DOI :

10.1109/IWGI.2003.159209

Filename :

1252534

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2394149