DocumentCode :
2394180
Title :
New paradigm for technology and business beyond 0.1 μm node
Author :
Nakatsuka, Haruo
Author_Institution :
Appl. Mater. Japan Inc., Tokyo, Japan
fYear :
2003
fDate :
6-8 Oct. 2003
Firstpage :
1
Lastpage :
3
Abstract :
This paper deals about the technological turning points, economical turning points in LSI.
Keywords :
MOS integrated circuits; MOSFET; electronics industry; integrated circuit economics; large scale integration; leakage currents; LSI technology; economical turning points; leakage current; Broadband communication; Consumer electronics; Costs; Economic indicators; Investments; Moore´s Law; Random access memory; Semiconductor device manufacture; Silicon; Turning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN :
1524-766X
Print_ISBN :
0-7803-7765-6
Type :
conf
DOI :
10.1109/VTSA.2003.1252536
Filename :
1252536
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2394180
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