Recent progress in devices and materials for CMOS technology

Author

Wong, H. S Philip ; Doris, B. ; Gusev, E. ; Ieong, M. ; Jones, E.C. ; Kedzierski, J. ; Ren, Z. ; Rim, K. ; Shang, H.

Author_Institution

Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2003

fDate

6-8 Oct. 2003

Firstpage

13

Lastpage

16

Abstract

This paper reviews the recent progress in continuing CMOS scaling by introducing new device structures and new materials. Starting from an analysis of the sources of device performance improvements, we present technology options to achieving these performance enhancements. These options include high dielectric constant (high-k) gate dielectric, metal gate electrode, double-gate FET, strained silicon FET, and Ge FET.

Keywords

CMOS integrated circuits; dielectric materials; elemental semiconductors; germanium; insulated gate field effect transistors; permittivity; silicon; CMOS scaling; CMOS technology; Ge; Ge FET; Si; device performance; dielectric constant; double-gate FET; gate dielectrics; metal gate electrode; reviews; strained silicon FET; CMOS technology; Dielectric materials; Double-gate FETs; Electrodes; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Silicon; Technological innovation; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2003 International Symposium on

ISSN

1524-766X

Print_ISBN

0-7803-7765-6

Type

conf

DOI

10.1109/VTSA.2003.1252539

Filename

1252539