Title :
Recent progress in devices and materials for CMOS technology
Author :
Wong, H. S Philip ; Doris, B. ; Gusev, E. ; Ieong, M. ; Jones, E.C. ; Kedzierski, J. ; Ren, Z. ; Rim, K. ; Shang, H.
Author_Institution :
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
This paper reviews the recent progress in continuing CMOS scaling by introducing new device structures and new materials. Starting from an analysis of the sources of device performance improvements, we present technology options to achieving these performance enhancements. These options include high dielectric constant (high-k) gate dielectric, metal gate electrode, double-gate FET, strained silicon FET, and Ge FET.
Keywords :
CMOS integrated circuits; dielectric materials; elemental semiconductors; germanium; insulated gate field effect transistors; permittivity; silicon; CMOS scaling; CMOS technology; Ge; Ge FET; Si; device performance; dielectric constant; double-gate FET; gate dielectrics; metal gate electrode; reviews; strained silicon FET; CMOS technology; Dielectric materials; Double-gate FETs; Electrodes; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Silicon; Technological innovation; Thickness measurement;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2003 International Symposium on
Print_ISBN :
0-7803-7765-6
DOI :
10.1109/VTSA.2003.1252539
