Investigation on VLSIs´ input ports susceptibility to conducted RF interference

Author

Fiori, Franco ; Benelli, Simone ; Gaidano, Giorgio ; Pozzolo, Vincenzo

Author_Institution

Dipartimento di Elettronica, Politecnico di Torino, Italy

fYear

1997

fDate

18-22 Aug 1997

Firstpage

326

Lastpage

329

Abstract

The usual susceptibility test performed to check an ICs hardness to conducted and radiated radiofrequency (RF) interference does not seem to be useful when studying IC subcircuit input ports. Susceptibility measurements carried out directly on the chip surface are mandatory. The work has been aimed at the development of a susceptibility test bench designed on the basis of the “PIN injection method”, in order to carry out “on chip” measurements by using the electron beam testing (EBT) probe station system. Measurements have been performed in the input pad of a VLSI circuit (CMOS (0.7 μm)) for interference with carrier frequency in the range 20 MHz-1 GHz and available power level up to 15 dBm

Keywords

CMOS integrated circuits; VLSI; electron beam testing; integrated circuit testing; radiofrequency interference; 0.7 mum; 20 MHz to 1 GHz; IC radiation hardness; IC subcircuit input ports; PIN injection method; RFI; VLSI; carrier frequency; conducted radiofrequency interference; electron beam testing; input ports susceptibility; radiated radiofrequency interference; susceptibility measurements; susceptibility test bench; Circuit testing; Electron beams; Integrated circuit testing; Performance evaluation; Radio frequency; Radiofrequency integrated circuits; Radiofrequency interference; Semiconductor device measurement; System testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 1997. IEEE 1997 International Symposium on

Conference_Location

Austin, TX

Print_ISBN

0-7803-4140-6

Type

conf

DOI

10.1109/ISEMC.1997.667697

Filename

667697