High Gain Photoconductive Semiconductor Switching

Switching properties are reported for high gain photoconductive semiconductor switches (PCSS). A 200 ps pulse width laser was used in tests to examine the relations between etectric field, rise time, delay, and minimum optical trigger energy for switches which reached 80 kV in a 50 /spl Omega/ transmission line with rise times as short as 600 ps. Infrared photoluminescence was imaged during high gain switching providing direct evidence for current filamentation. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed.