DocumentCode
2394672
Title
Optical Probing Of Field Dependent Effects In Gaas Photoconductive Switches
Author
Donaldson, W.R.
Author_Institution
University of Rochester
fYear
1991
fDate
16-19 June 1991
Firstpage
45
Lastpage
49
Abstract
An electro-optic probe is used to study the physics of semiconductors subjected to high fields with 100-ps time resolution. A variety of phenomena have been seen in GaAs in photoconductive switches. There appears to be evidence of current channeling in switches operating in lock-on mode. In addition, the affects of contact preparation on switch operation have been investigated.
Keywords
Cameras; Gallium arsenide; Laser excitation; Optical harmonic generation; Optical pumping; Optical switches; Photoconductivity; Probes; Pulse amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1991. Digest of Technical Papers. Eighth IEEE International
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-0177-3
Type
conf
DOI
10.1109/PPC.1991.733231
Filename
733231
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