• DocumentCode
    2394726
  • Title

    Optimized noise and consistent RF model for 0.18 μm MOSFETs

  • Author

    Huang, C.H. ; Li, H.Y. ; Chin, Albert ; Liang, V. ; Chien, S.C.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2003
  • fDate
    6-8 Oct. 2003
  • Firstpage
    109
  • Lastpage
    112
  • Abstract
    Strong dependence of finger number on minimum noise figure (NFmin) is observed in 0.18 μm MOSFETs. A lowest NFmin of 0.93 dB is measured at 5.8 GHz using 50 fingers but increases as either increasing or decreasing finger number. We have used a self-consistent S-parameter and NFmin model to analysis this abnormal finger number dependence, and the reason is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number.
  • Keywords
    MOSFET; S-parameters; semiconductor device models; semiconductor device noise; 0.18 micron; 0.93 dB; 5.8 GHz; MOSFET; consistent RF model; finger number; gate resistance; noise figure; optimized noise; self consistent S-parameter; Active noise reduction; Circuit noise; Electrical resistance measurement; Fingers; Frequency measurement; Integrated circuit noise; MOSFETs; Noise measurement; Noise reduction; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2003 International Symposium on
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-7765-6
  • Type

    conf

  • DOI
    10.1109/VTSA.2003.1252564
  • Filename
    1252564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2394726