• DocumentCode
    2394803
  • Title

    Competitive advantage of SOI from dynamic threshold shifts and reduced capacitance

  • Author

    Ketchen, Mark B.

  • Author_Institution
    Div. of Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2003
  • fDate
    6-8 Oct. 2003
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    In this paper, capacitance reduction and drive enhancement as a consequence of partially depleted SOI floating body topology.
  • Keywords
    field effect transistors; silicon-on-insulator; topology; Si; capacitance reduction; partially depleted SOI floating body topology; threshold shift; Capacitance measurement; Delay; Hardware; Immune system; Inverters; Logic gates; Performance gain; Threshold voltage; Time measurement; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2003 International Symposium on
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-7765-6
  • Type

    conf

  • DOI
    10.1109/VTSA.2003.1252569
  • Filename
    1252569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2394803