The technology of laser formed interactions for wafer scale integration

Restructurable VLSI wafer-scale circuits have been built using two methods, both using laser energy to create low resistance connections between bus lines on already existing circuits. In one technique verticle connections of about 10 Ω are made up from top metal, through silicon nitride, to first metal lines. The other involves melting of silicon in the gap between two implant regions, with the lateral diffusion of dopants creating connections of about 100 Ω. Details of the linking structures, their characteristics, and the apparatus used to interconnect them are described