Title :
Growth of Grains Effect on Boron Diffusion in Heavily Implanted Polycrystalline silicon Thin Films
Author :
Abadli, S. ; Mansour, F.
Author_Institution :
Dept. of Electron., Mentouri Route d´´Ain EL-Bey Univ., Constantine
Abstract :
A one-dimensional two stream diffusion model adapted to the granular structure of polysilicon and to the effects of the strong concentrations has been developed. This model includes dopant clustering in grains as well as in grain boundaries. Growth of grains and energy barrier height are coupled with the dopant diffusion coefficients and the process temperature based on thermodynamic concepts. The adjustment of the simulated profiles with the experimental SIMS profiles for short treatment times ranging between 1 and 30 minutes at temperature of 700degC; allowed the validation of this model. Growth of grains and strong-concentrations phenomena are the major effects during annealing processes. They play a significant role for the precise determination of the diffusion profiles
Keywords :
annealing; boron; elemental semiconductors; grain boundaries; semiconductor process modelling; semiconductor thin films; silicon; 1 to 30 mins; 1D two stream diffusion model; 700 C; B; SIMS profiles; Si; annealing processes; boron diffusion; dopant clustering; dopant diffusion coefficients; energy barrier height; grain boundaries; grains effect growth; polycrystalline silicon thin films; Annealing; Boron; Doping profiles; Electrodes; Grain boundaries; Semiconductor process modeling; Semiconductor thin films; Silicon; Temperature distribution; Thin film circuits;
Conference_Titel :
MEMS, NANO and Smart Systems, The 2006 International Conference on
Conference_Location :
Cairo
Print_ISBN :
1-4244-0899-7
DOI :
10.1109/ICMENS.2006.348207
