Simultaneous quality improvement of tunneling-and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation

In this paper, we found the nitridation on the interpoly-oxide with NH₃ and N₂O processes can simultaneously improve the quality of both tunneling oxide and interpoly-oxide. Three types of poly-Si for floating gate are investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown filed, charge to breakdown (Q_BD) and trapping rate. The Q_BD of interpoly-oxide can be reached as high as 35 C/cm². This scheme is very promising for nonvolatile memory devices.