DocumentCode :
2395350
Title :
ZnSe photoconductive switches with transparent electrodes
Author :
Cho, P.S. ; Peng, F. ; Ho, P.-T. ; Goldhar, J. ; Lee, Chi H.
Author_Institution :
University of Maryland
fYear :
1991
fDate :
16-19 June 1991
Firstpage :
209
Lastpage :
212
Abstract :
High voltage photoconductive switches utilizing polycrystalline ZnSe are investigated. Experiments have been performed on longitudinal geometry ZnSe switches with perforated metal film electrodes, transparent electrolyte and plasma electrode. High bias fields up to 100 kV/cm and current densities in excess of 100 kA/cm/sup 2/ can be obtained in our ZnSe switches. Novel applications of hte switch which utilize nonlinear behavior at high fields are discussed.
Keywords :
Chemical lasers; Current density; Electrodes; Optical attenuators; Optical switches; Photoconductivity; Photonic band gap; Power semiconductor switches; Voltage; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1991. Digest of Technical Papers. Eighth IEEE International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0177-3
Type :
conf
DOI :
10.1109/PPC.1991.733269
Filename :
733269
Link To Document :
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