DocumentCode
2395399
Title
A new approach to model the I∼V characteristics for nanoscale MOSFETs
Author
Pattanaik, Manisha ; Banerjee, Swapna
Author_Institution
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
fYear
2003
fDate
2003
Firstpage
265
Lastpage
268
Abstract
A compact current voltage model is proposed for nanoscale MOSFET device. I∼V characteristics are plotted based on the modified mobility and carrier velocity saturation models including the high field effects along the entire channel. Results of the proposed model are in good agreement with the experimental and TCAD simulator results down to channel length of 10 nm MOSFET.
Keywords
MOSFET; semiconductor device models; 10 nm; I-V characteristics; carrier velocity saturation model; current voltage model; high field effects; nanoscale MOSFET device; Analytical models; Impurities; Interference; MOSFET circuits; Nanoscale devices; Particle scattering; Predictive models; Quantum mechanics; Scattering parameters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN
1524-766X
Print_ISBN
0-7803-7765-6
Type
conf
DOI
10.1109/VTSA.2003.1252604
Filename
1252604
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