Title :
A new approach to model the I∼V characteristics for nanoscale MOSFETs
Author :
Pattanaik, Manisha ; Banerjee, Swapna
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Abstract :
A compact current voltage model is proposed for nanoscale MOSFET device. I∼V characteristics are plotted based on the modified mobility and carrier velocity saturation models including the high field effects along the entire channel. Results of the proposed model are in good agreement with the experimental and TCAD simulator results down to channel length of 10 nm MOSFET.
Keywords :
MOSFET; semiconductor device models; 10 nm; I-V characteristics; carrier velocity saturation model; current voltage model; high field effects; nanoscale MOSFET device; Analytical models; Impurities; Interference; MOSFET circuits; Nanoscale devices; Particle scattering; Predictive models; Quantum mechanics; Scattering parameters; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2003 International Symposium on
Print_ISBN :
0-7803-7765-6
DOI :
10.1109/VTSA.2003.1252604
