DocumentCode
2397092
Title
A comparison of IGBTs and power MOSFETs for variable frequency motor drives
Author
Dubhashi, Ajit U. ; Pelly, Brain R.
Author_Institution
Int. Rectifiers, El Segundo, CA, USA
fYear
1989
fDate
13-17 Mar 1989
Firstpage
67
Lastpage
74
Abstract
Insulated-gate bipolar transistors (IGBTs) and power MOSFETs are compared for efficiency as well as system costs for a range of three phase pulse-width-modulated motor drives. Losses are calculated for two different carrier frequencies; system costs include the heat sink. The aluminum versus silicon tradeoff is discussed and relevant examples are given. Results are presented in a graphical format
Keywords
bipolar transistors; electric motors; insulated gate field effect transistors; power transistors; pulse width modulation; variable speed drives; IGBTs; PWM; carrier frequencies; costs; efficiency; motor drives; power MOSFETs; power transistors; three phase; variable speed drives; Conductivity; Diodes; Equivalent circuits; FETs; Floods; Frequency; Insulated gate bipolar transistors; Low voltage; MOSFETs; Motor drives;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1989. APEC' 89. Conference Proceedings 1989., Fourth Annual IEEE
Conference_Location
Baltimore, MD
Type
conf
DOI
10.1109/APEC.1989.36953
Filename
36953
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