Title :
A comparison of IGBTs and power MOSFETs for variable frequency motor drives
Author :
Dubhashi, Ajit U. ; Pelly, Brain R.
Author_Institution :
Int. Rectifiers, El Segundo, CA, USA
Abstract :
Insulated-gate bipolar transistors (IGBTs) and power MOSFETs are compared for efficiency as well as system costs for a range of three phase pulse-width-modulated motor drives. Losses are calculated for two different carrier frequencies; system costs include the heat sink. The aluminum versus silicon tradeoff is discussed and relevant examples are given. Results are presented in a graphical format
Keywords :
bipolar transistors; electric motors; insulated gate field effect transistors; power transistors; pulse width modulation; variable speed drives; IGBTs; PWM; carrier frequencies; costs; efficiency; motor drives; power MOSFETs; power transistors; three phase; variable speed drives; Conductivity; Diodes; Equivalent circuits; FETs; Floods; Frequency; Insulated gate bipolar transistors; Low voltage; MOSFETs; Motor drives;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1989. APEC' 89. Conference Proceedings 1989., Fourth Annual IEEE
Conference_Location :
Baltimore, MD
DOI :
10.1109/APEC.1989.36953
