DocumentCode :
2397487
Title :
The influence of process parameter variations on the signal distribution behaviour of wafer scale integration devices
Author :
Gneiting, Thomas
Author_Institution :
Brunel Univ., Uxbridge, UK
fYear :
1995
fDate :
18-20 Jan 1995
Firstpage :
248
Lastpage :
257
Abstract :
One of the key issues of the implementation of circuits using wafer scale integration technologies is the synchronous distribution of signals, either clock, data or control over a large area of silicon. Fluctuations of process parameters can have a major influence on the performance of these devices. Within this paper, simulations, based on real measured process parameters, are undertaken to show the sensitivity of different signal distribution strategies to these variations
Keywords :
CMOS integrated circuits; circuit analysis computing; delays; integrated circuit modelling; probability; sensitivity analysis; statistical analysis; wafer-scale integration; WSI devices; measured process parameters; process parameter variations; signal distribution behaviour; simulations; wafer scale integration devices; Circuits; Clocks; Delay effects; Fluctuations; SPICE; Semiconductor device modeling; Signal processing; Silicon; Time measurement; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wafer Scale Integration, 1995. Proceedings., Seventh Annual IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2467-6
Type :
conf
DOI :
10.1109/ICWSI.1995.515459
Filename :
515459
Link To Document :
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