DocumentCode
2397487
Title
The influence of process parameter variations on the signal distribution behaviour of wafer scale integration devices
Author
Gneiting, Thomas
Author_Institution
Brunel Univ., Uxbridge, UK
fYear
1995
fDate
18-20 Jan 1995
Firstpage
248
Lastpage
257
Abstract
One of the key issues of the implementation of circuits using wafer scale integration technologies is the synchronous distribution of signals, either clock, data or control over a large area of silicon. Fluctuations of process parameters can have a major influence on the performance of these devices. Within this paper, simulations, based on real measured process parameters, are undertaken to show the sensitivity of different signal distribution strategies to these variations
Keywords
CMOS integrated circuits; circuit analysis computing; delays; integrated circuit modelling; probability; sensitivity analysis; statistical analysis; wafer-scale integration; WSI devices; measured process parameters; process parameter variations; signal distribution behaviour; simulations; wafer scale integration devices; Circuits; Clocks; Delay effects; Fluctuations; SPICE; Semiconductor device modeling; Signal processing; Silicon; Time measurement; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Wafer Scale Integration, 1995. Proceedings., Seventh Annual IEEE International Conference on
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2467-6
Type
conf
DOI
10.1109/ICWSI.1995.515459
Filename
515459
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