• DocumentCode
    2397572
  • Title

    Technology scaling issues of an iddq built-in current sensor

  • Author

    Xue, Bin ; Walker, D.M.H.

  • Author_Institution
    Dept. of Comput. Sci., Texas A&M Univ., College Station, TX
  • fYear
    2005
  • fDate
    1-1 May 2005
  • Firstpage
    10
  • Lastpage
    15
  • Abstract
    Analysis and comparison of 1.5 mum and 350 nm CMOS test chip results of a built-in current sensor design reveal several critical design issues. This paper includes a discussion of these issues. The success of the sensor design hinges on how these issues are addressed in order to achieve successful operation during technology scaling
  • Keywords
    CMOS integrated circuits; electric sensing devices; 1.5 micron; 350 nm; CMOS test chip; IDDQ built-in current sensor; quiescent current testing; sensor design; technology scaling; CMOS technology; Calibration; Counting circuits; Flip-flops; Semiconductor device measurement; Signal resolution; Signal to noise ratio; Stochastic resonance; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Current and Defect Based Testing, 2005. DBT 2005. Proceedings. 2005 IEEE International Workshop on
  • Conference_Location
    Palm Springs, CA
  • Print_ISBN
    1-4244-0034-1
  • Type

    conf

  • DOI
    10.1109/DBT.2005.1531295
  • Filename
    1531295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2397572