DocumentCode
2397712
Title
21st century gigascale integration (GSI)
Author
Meindl, J.D.
Author_Institution
Georgia Inst. of Technol., Atlanta, GA
fYear
1995
fDate
18-20 Jan 1995
Firstpage
379
Abstract
Summary form only given. Throughout the past 35 years integrated electronics has advanced at a pace unmatched in technological history. Minimum feature sizes have declined by about a factor of 1/50, switching energy of a binary transition has decreased by approximately 1/105 times, the number of transistors per chip has multiplied by around 50×106, the price range of a chip has remained virtually unchanged and its reliability has increased manifold. As a consequence of these unprecedented advances, integrated electronics has been the principal driver of the modern information revolution. The ubiquitous microchip has had a profound and pervasive impact on our Lives. Consequently, future prospects for continuing the technological advance of integrated electronics are of paramount importance to society as a whole. The central thesis of this discussion is that future opportunities for multi-billion transistor chips-described as gigascale integration (GSI)-in the 21st century will be governed by a hierarchy of physical limits. The levels of this hierarchy can be codified as (1) fundamental, (2) material, (3) device, (4) circuit and (5) system
Keywords
integrated circuit technology; wafer-scale integration; GSI; gigascale integration; integrated electronics; monolithic IC; Conducting materials; Delay; Driver circuits; Gallium; History; Integrated circuit interconnections; Microelectronics; Power system interconnection; Thermal conductivity; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Wafer Scale Integration, 1995. Proceedings., Seventh Annual IEEE International Conference on
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2467-6
Type
conf
DOI
10.1109/ICWSI.1995.515472
Filename
515472
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