Development of a microwave PHEMT device model

Many microwave circuits utilize the nonlinear properties of solid state microwave devices in their designs. The Pseudomorphic High Electron Mobility Transistor (PHEMT) provides a high performance, low noise and low power consumption active device for use in these applications. This paper presents the steps leading to development of a PHEMT circuit model for accurate prediction of harmonics arising from moderate to large signal input power. The developed model is capable of characterizing the fundamental, second, and third order harmonic device performance over a broad range of input power with a high degree of accuracy