• DocumentCode
    2398532
  • Title

    Characterizing a titanium nitride reactive deposition process using design of experiments

  • Author

    Berti, Antonio ; Ramírez, José

  • Author_Institution
    Digital Equipment Corp., Hudson, MA, USA
  • fYear
    1991
  • fDate
    21-23 Oct 1991
  • Firstpage
    179
  • Lastpage
    184
  • Abstract
    The authors outline the successful application of design of experiments in the characterization of a titanium nitride deposition process. As a result of using two central composite designs the characterization was performed in less than one third of the time that a similar characterization had taken using one factor at a time experimentation. This resulted in savings of manpower, equipment time, and materials. The process throughput was quadrupled and the titanium nitride uniformity was improved by 60%, while the resistivity and the stress of the film was reduced. Furthermore, a reduction in setup times was achieved because this single set of deposition parameters satisfies the requirements of four distinct applications, which previously required two sets of deposition parameters
  • Keywords
    VLSI; integrated circuit manufacture; metallisation; sputter deposition; titanium compounds; TiN deposition process; ULSI interconnect; VLSI interconnect; characterization; composite designs; design of experiments; process throughput; reactive deposition process; set of deposition parameters; Aluminum; Cathodes; Compressive stress; Conductivity; Process design; Sputtering; Throughput; Tin; Titanium; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop, 1991. ASMC 91 Proceedings. IEEE/SEMI 1991
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-0152-8
  • Type

    conf

  • DOI
    10.1109/ASMC.1991.167406
  • Filename
    167406