• DocumentCode
    2398990
  • Title

    Progress Towards An MCT-based 100+ Kw High-frequency Inverter

  • Author

    Braun, C. ; Pastore, R.

  • Author_Institution
    Electronics Technology and Devices Laboratory
  • fYear
    1991
  • fDate
    16-19 June 1991
  • Firstpage
    1009
  • Lastpage
    1011
  • Abstract
    Significant progress has been recently made in achieving a 100+ kW level inverter using high-voltage diffusion-doped MOS Controlled Thyristors (MCTs). These MCTs are the deliverables from a three year contractual effort to extend the MCT technology to devices capable of switching high voltages/powers. Preliminary test results have shown that a single device can control/turn-off at least 160 kW average power (burst), handle a surge (single shot) turn-on of 15.5 kA at 1720 V for a peak switched power of 26 MW, and can be operated up to 50 kHz. Additionally, series operation of 3 MCTs to 5 kV, and parallel operation of 3 MCTs to 300 A turn-off have been demonstrated. Future work will deal with construction and evaluation of a high average power inverter using these MCT switches.
  • Keywords
    DC-DC power converters; Epitaxial layers; Frequency; Inverters; Laboratories; MOSFETs; Switches; Testing; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference, 1991. Digest of Technical Papers. Eighth IEEE International
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    0-7803-0177-3
  • Type

    conf

  • DOI
    10.1109/PPC.1991.733457
  • Filename
    733457