Amorphous thin film white-LED and its light-emitting mechanism

Author

Zhiming, Chen ; Guosheng, Sun ; Hongbing, Pu

Author_Institution

Shaanxi Inst. of Mech. Eng., Xi´´an, China

fYear

1991

fDate

15-17 Oct. 1991

Firstpage

122

Lastpage

125

Abstract

Thin film light-emitting diodes (TFLEDs) made of amorphous semiconductor silicon carbide (a-SiC:H) have been developed by glow discharge deposition in an SiH/sub 4/+CH/sub 4/ mixture. White light emission is observable in the samples with a structure of either glass/ITO/a-SiC:H/Al or glass/ITO/p-i-n a-SiC:H/Al when a proper critical condition has been established. The light-emitting mechanism associated with these LEDs is suggested to be an irradiative recombination of the electrons in the extended states of the conduction band and the holes in the localized states of the valence band.<>

Keywords

amorphous semiconductors; electron-hole recombination; hydrogen; light emitting diodes; plasma CVD; silicon compounds; SiH/sub 4/-CH/sub 4/ mixture; SiO2Jk-InSnO-SiC:H-Al; amorphous thin films; conduction band; extended states; glow discharge deposition; irradiative recombination; localized states; silane-methane mixture; valence band; white-LED; Amorphous materials; Amorphous semiconductors; Glass; Glow discharges; Indium tin oxide; Light emitting diodes; Semiconductor thin films; Silicon carbide; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Display Research Conference, 1991., Conference Record of the 1991 International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0213-3

Type

conf

DOI

10.1109/DISPL.1991.167448

Filename

167448