DocumentCode
2399201
Title
Silicon field emitter arrays for cathodoluminescent flat panel displays
Author
Sune, C.T. ; Jones, G.W. ; Gray, H.F.
Author_Institution
MCNC Center for Microelectron., Research Triangle Park, NC, USA
fYear
1991
fDate
15-17 Oct. 1991
Firstpage
141
Lastpage
142
Abstract
Cathodoluminescent flat panel displays can be made with field emitter arrays (FEAs). Using a novel orientation-dependent etching (ODE) and linear thermal oxidation process, the authors have fabricated uniform and reproducible FEAs which yield up to 10 mu A/tip with less than 200-V DC bias voltages. Modulation voltages are in the 10-V region. These FEAs can be the basis for a simple and inexpensive cathodoluminescent flat panel display or TV.<>
Keywords
cathodoluminescence; elemental semiconductors; etching; flat panel displays; luminescent devices; oxidation; semiconductor technology; silicon; 10 V; 200 V; DC bias; Si; cathodoluminescent flat panel displays; field emitter arrays; linear thermal oxidation; modulation voltages; orientation-dependent etching; Etching; Fabrication; Field emitter arrays; Flat panel displays; Liquid crystal displays; Microelectronics; Oxidation; Plasma displays; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Display Research Conference, 1991., Conference Record of the 1991 International
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-0213-3
Type
conf
DOI
10.1109/DISPL.1991.167453
Filename
167453
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