DocumentCode
239973
Title
Comparative review of the TiO2 and the spintronic memristor devices
Author
Elshamy, Mohamed ; Mostafa, Hassan ; Sameh Said, M.
Author_Institution
Electron. & Commun. Eng. Dept., Cairo Univ., Cairo, Egypt
fYear
2014
fDate
4-7 May 2014
Firstpage
1
Lastpage
6
Abstract
Memristor, has attracted increased attentions since the first real device was discovered by HP Labs in 2008. Its distinctive characteristic to store the historic state of the voltage/current through it creates great potentials in circuit design. Thus, many physical realization of the device have been introduced. In this work, a review of two of the most challenging physical realizations of the memristor is performed in light of what was predicted by Chua in 1971.
Keywords
magnetoelectronics; memristors; network synthesis; titanium compounds; TIP Labs; TiO2; circuit design; historic state; physical realizations; spintronic memristor devices; Conductivity; Magnetization; Magnetoelectronics; Memristors; Resistance; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering (CCECE), 2014 IEEE 27th Canadian Conference on
Conference_Location
Toronto, ON
ISSN
0840-7789
Print_ISBN
978-1-4799-3099-9
Type
conf
DOI
10.1109/CCECE.2014.6900966
Filename
6900966
Link To Document