• DocumentCode
    239973
  • Title

    Comparative review of the TiO2 and the spintronic memristor devices

  • Author

    Elshamy, Mohamed ; Mostafa, Hassan ; Sameh Said, M.

  • Author_Institution
    Electron. & Commun. Eng. Dept., Cairo Univ., Cairo, Egypt
  • fYear
    2014
  • fDate
    4-7 May 2014
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Memristor, has attracted increased attentions since the first real device was discovered by HP Labs in 2008. Its distinctive characteristic to store the historic state of the voltage/current through it creates great potentials in circuit design. Thus, many physical realization of the device have been introduced. In this work, a review of two of the most challenging physical realizations of the memristor is performed in light of what was predicted by Chua in 1971.
  • Keywords
    magnetoelectronics; memristors; network synthesis; titanium compounds; TIP Labs; TiO2; circuit design; historic state; physical realizations; spintronic memristor devices; Conductivity; Magnetization; Magnetoelectronics; Memristors; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering (CCECE), 2014 IEEE 27th Canadian Conference on
  • Conference_Location
    Toronto, ON
  • ISSN
    0840-7789
  • Print_ISBN
    978-1-4799-3099-9
  • Type

    conf

  • DOI
    10.1109/CCECE.2014.6900966
  • Filename
    6900966