DocumentCode :
2399740
Title :
Microphotonics devices based on silicon microfabrication technology
Author :
Tsuchizawa, T. ; Watanabe, T. ; Yamada, K. ; Shoji, T. ; Takahashi, J. ; Itabashi, S.
Author_Institution :
NTT Microsyst. Integration Labs., Japan
Volume :
2
fYear :
2003
fDate :
27-28 Oct. 2003
Firstpage :
585
Abstract :
A silicon wire waveguide system based on the silicon-on-insulator (SOI) structure is promising for high-density integrated and high performance optical circuits. The Si/SiO2 waveguide can achieve strong light confinement due to its high refractive-index contrast. In this paper, we describe our recent progress on microphotonics devices utilizing Si waveguide system.
Keywords :
elemental semiconductors; infrared spectra; integrated optics; micro-optics; optical fabrication; optical waveguides; refractive index; silicon; silicon compounds; silicon-on-insulator; Si-SiO2; SiO2 waveguide; high performance optical circuit; high-density integrated optical circuit; light confinement; microphotonic device; refractive-index contrast; silicon microfabrication technology; silicon wire waveguide system; silicon-on-insulator structure; Circuits; Etching; Optical waveguides; Polymers; Propagation losses; Resonator filters; Semiconductor waveguides; Silicon on insulator technology; Substrates; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7888-1
Type :
conf
DOI :
10.1109/LEOS.2003.1252935
Filename :
1252935
Link To Document :
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