Microphotonics devices based on silicon microfabrication technology

Author

Tsuchizawa, T. ; Watanabe, T. ; Yamada, K. ; Shoji, T. ; Takahashi, J. ; Itabashi, S.

Author_Institution

NTT Microsyst. Integration Labs., Japan

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

585

Abstract

A silicon wire waveguide system based on the silicon-on-insulator (SOI) structure is promising for high-density integrated and high performance optical circuits. The Si/SiO₂ waveguide can achieve strong light confinement due to its high refractive-index contrast. In this paper, we describe our recent progress on microphotonics devices utilizing Si waveguide system.

Keywords

elemental semiconductors; infrared spectra; integrated optics; micro-optics; optical fabrication; optical waveguides; refractive index; silicon; silicon compounds; silicon-on-insulator; Si-SiO₂; SiO₂ waveguide; high performance optical circuit; high-density integrated optical circuit; light confinement; microphotonic device; refractive-index contrast; silicon microfabrication technology; silicon wire waveguide system; silicon-on-insulator structure; Circuits; Etching; Optical waveguides; Polymers; Propagation losses; Resonator filters; Semiconductor waveguides; Silicon on insulator technology; Substrates; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1252935

Filename

1252935