Prospects for low noise and high speed InGaAs-on-silicon photodetectors

Author

Pauchard, A. ; Bitter, M. ; Pan, Z. ; Kristjansson, S. ; Dimitrov, R. ; Hodge, L. ; Lo, Y.H.

Author_Institution

Nova Crystals Inc., San Jose, CA, USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Abstract

InGaAs-on-silicon photodetectors are very attractive in a variety of low noise and high-speed applications where the superior thermal and electrical properties of Si can be exploited to overcome the limitations of existing detectors. InGaAs-on-silicon p-i-n devices can potentially have a much higher dynamic range than InP-based devices. The low excess noise of InGaAs-on-silicon avalanche photodiodes (APD) has a direct impact on receiver sensitivity and the high gain-bandwidth product is of particular interest in high-speed (10 Gb/s and above) systems.

Keywords

III-V semiconductors; avalanche photodiodes; elemental semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical noise; optical receivers; p-i-n photodiodes; photodetectors; silicon; 10 Gbits/s; APD; InGaAs-on-silicon avalanche photodiode; InGaAs-on-silicon p-i-n device; InGaAs-on-silicon photodetector; InP-based device; Si-InGaAs; gain-bandwidth product; high-speed application; optical noise; receiver sensitivity; Avalanche photodiodes; Bandwidth; Dark current; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photodetectors; Signal to noise ratio; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1252936

Filename

1252936