DocumentCode :
23998
Title :
Nanometer-Scale 
RRAM
Author :
Zhiping Zhang ; Yi Wu ; Wong, H.-S Philip ; Wong, S. Simon
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Volume :
34
Issue :
8
fYear :
2013
fDate :
Aug. 2013
Firstpage :
1005
Lastpage :
1007
Abstract :
HfOx-based resistive random access memory with an active area down to few nanometers in diameter is fabricated and characterized. Scaling trends for forming and switching characteristics are presented. For the smallest device with an active area of few nanometers in diameter, ac switching endurance of 108 cycles with more than 100 × resistance window is demonstrated. In addition, multiple resistance states are shown to be stable after 105 read cycles and 105 s baking at 150 °C.
Keywords :
hafnium compounds; random-access storage; AC switching endurance; HfO; forming characteristics; nanometerscale halfnium oxide RRAM; resistance state; resistance window; resistive random access memory; switching characteristics; Bipolar switching; Hafnium oxide $({rm HfO}_{x})$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2265404
Filename :
6553186
Link To Document :
