Laser driver IC in Si-bipolar technology for 5 Gbit/s and 45 mA modulation current

We report on the design and implementation of a 5 Gbit/s-silicon bipolar laser driver IC for direct modulation of a laser diode. The adjustable modulation current range is 15 mA 45 mA. The IC can drive 25 Ω-laser modules via a 25 Ω-line. Typical power dissipation is 930 mW for a modulation current of 45 mA. Though the IC has been fabricated on a production line instead of using a lab technology, it is one of the fastest laser driver ICs in silicon. In contrast to previous works in this field, not only the capability to drive an ohmic load is shown, but also the performance in the case of driving a real laser module.