Title :
GaAs Power HBT: COOL Device With HOT Performance
Abstract :
AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) designed for microwave power applicatims have shown marked improvements in output power and power-added efficiency (PAE) during recent years. This paper provides a synopsis of the design considerations for high efficiency, GaAs HBT unit-cell and power amplifiers. Performance results of several high efficiency HBT power MMIC amplifiers designed for narrowband and broadband applications are also be presented.
Keywords :
Breakdown voltage; Broadband amplifiers; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Microwave devices; Power amplifiers; Power generation;
Conference_Titel :
Sarnoff Symposium, 1995., IEEE Princeton Section
Conference_Location :
Princeton, NJ, USA
DOI :
10.1109/SARNOF.1995.636670
