DocumentCode
2400268
Title
PHEMTs - Emerging High Performance Devices
Author
Helms, David R.
fYear
1995
fDate
28-28 April 1995
Firstpage
1
Lastpage
7
Abstract
PHEMTs, grown on GaAs and InP, due to their extremely high mobility, offer significant performance advantages from UHF to W-band: the lowest noise figures at the highest gains and very high power at the highest efficiencies. These performance improvements enable the development of major advances in systems applications. This presentation compares PHEMTs to MESFETs to show how each works and points out the advantages of using PHEMTs for systems applications.
Keywords
Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Lattices; MESFETs; Noise figure; PHEMTs; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Sarnoff Symposium, 1995., IEEE Princeton Section
Conference_Location
Princeton, NJ, USA
Type
conf
DOI
10.1109/SARNOF.1995.636675
Filename
636675
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