Title :
Monolithic integration of GaN electronic amplifiers with LiNbO3 optical modulators
Author :
Ralph, Stephen E. ; King, Mark ; Namkoong, Gon ; Doolittle, Alan
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., USA
Abstract :
We report a monolithic integration technology which combines electronic drive circuitry and detectors directly with modulators capable of amplitude and phase modulation. Here, monolithic integration of GaN electronic amplifier having excellent high frequency and high power capabilities with LiN modulators is presented.
Keywords :
III-V semiconductors; amplitude modulation; gallium compounds; integrated optics; integrated optoelectronics; lithium compounds; monolithic integrated circuits; optical communication equipment; optical materials; optical modulation; phase modulation; wide band gap semiconductors; GaN; GaN electronic amplifiers; LiNbO3; LiNbO3 optical modulator; amplitude modulation; electronic drive circuitry; monolithic integration; phase modulation; Gallium nitride; Integrated optics; Monolithic integrated circuits; Optical amplifiers; Optical modulation; Optical receivers; Optical signal processing; Optical waveguides; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1252969
