Title :
GaN micro-LED arrays with integrated sapphire microlenses
Author :
Choi, H.W. ; Jeon, C.W. ; Liu, C. ; Dawson, M.D.
Author_Institution :
Inst. of Photonics, Strathclyde Univ., UK
Abstract :
GaN microLED devices with integrated microlenses have been demonstrated. The microlenses, with a focal length of 24 μm and an r.m.s. roughness of ∼ 1 nm, are fabricated on the polished backside of the sapphire substrate by inductively-coupled plasma (ICP) etching.
Keywords :
III-V semiconductors; gallium compounds; integrated optics; light emitting diodes; microlenses; optical arrays; optical fabrication; sapphire; sputter etching; surface roughness; wide band gap semiconductors; 24 micron; Al2O3; GaN; GaN microLED arrays; ICP etching; inductively-coupled plasma etching; integrated sapphire microlenses; rms roughness; sapphire substrate; Atom optics; Gallium nitride; Lenses; Light emitting diodes; Optical arrays; Packaging; Plasma measurements; Quantum well devices; Stimulated emission; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1252970
