DocumentCode :
2400306
Title :
Inorganic electroluminescent displays: the impact of new materials
Author :
Steckl, A.J. ; Heikenfeld, J.C. ; Munasinghe, C. ; Lee, D.S. ; Wang, Y.Q. ; Jones, R.
Author_Institution :
Nanoelectron. Lab., Cincinnati Univ., USA
Volume :
2
fYear :
2003
fDate :
27-28 Oct. 2003
Firstpage :
656
Abstract :
An overview of inorganic EL (iEL) flat panel displays (FPD) is presented. This includes a summary of the key points of iEL device operation and on overview of the impact of new phosphors and dielectric materials critical in EL device operation. This is followed by in-depth review of iEL devices and displays utilizing rare-earth-doped GaN and transition-metal-doped ZnS, in conjunction with high dielectric constant insulating layers. Next, a brief status of companies in the iEL field is given. Finally, speculative concepts on combining inorganic and organic light emitting materials are discussed.
Keywords :
II-VI semiconductors; III-V semiconductors; dielectric materials; electroluminescent displays; flat panel displays; gallium compounds; permittivity; phosphors; rare earth metals; reviews; transition metals; wide band gap semiconductors; zinc compounds; FPD; dielectric constant insulating layers; dielectric materials; iEL flat panel displays; inorganic electroluminescent displays; inorganic light emitting material; organic light emitting material; overview; phosphors; rare-earth-doped GaN; transition-metal-doped ZnS; Dielectric materials; Dielectrics and electrical insulation; Electroluminescent devices; Flat panel displays; Gallium nitride; High-K gate dielectrics; IEL; Inorganic materials; Phosphors; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7888-1
Type :
conf
DOI :
10.1109/LEOS.2003.1252971
Filename :
1252971
Link To Document :
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