Inorganic electroluminescent displays: the impact of new materials

Author

Steckl, A.J. ; Heikenfeld, J.C. ; Munasinghe, C. ; Lee, D.S. ; Wang, Y.Q. ; Jones, R.

Author_Institution

Nanoelectron. Lab., Cincinnati Univ., USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

656

Abstract

An overview of inorganic EL (iEL) flat panel displays (FPD) is presented. This includes a summary of the key points of iEL device operation and on overview of the impact of new phosphors and dielectric materials critical in EL device operation. This is followed by in-depth review of iEL devices and displays utilizing rare-earth-doped GaN and transition-metal-doped ZnS, in conjunction with high dielectric constant insulating layers. Next, a brief status of companies in the iEL field is given. Finally, speculative concepts on combining inorganic and organic light emitting materials are discussed.

Keywords

II-VI semiconductors; III-V semiconductors; dielectric materials; electroluminescent displays; flat panel displays; gallium compounds; permittivity; phosphors; rare earth metals; reviews; transition metals; wide band gap semiconductors; zinc compounds; FPD; dielectric constant insulating layers; dielectric materials; iEL flat panel displays; inorganic electroluminescent displays; inorganic light emitting material; organic light emitting material; overview; phosphors; rare-earth-doped GaN; transition-metal-doped ZnS; Dielectric materials; Dielectrics and electrical insulation; Electroluminescent devices; Flat panel displays; Gallium nitride; High-K gate dielectrics; IEL; Inorganic materials; Phosphors; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1252971

Filename

1252971