DocumentCode :
2400312
Title :
IGBT and PN junction diode loss modeling for system simulations
Author :
Cassimere, Brandon ; Sudhoff, Scott D. ; Cassimere, Brandon ; Aliprantis, Dionysios C. ; Swinney, M.D.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN
fYear :
2005
fDate :
15-15 May 2005
Firstpage :
941
Lastpage :
949
Abstract :
An accurate and numerically efficient method of calculating semiconductor losses in drive systems is set forth. In the proposed approach, switching events are modeled by idealized voltage and current waveforms that yield the appropriate switching energy loss. The waveforms are specifically designed to allow for large time steps, thus retaining the computational efficiency of conventional ideal-switch time-domain simulations often used for system studies
Keywords :
insulated gate bipolar transistors; losses; p-n junctions; power semiconductor diodes; time-domain analysis; IGBT; PN junction; computational efficiency; diode loss modeling; drive systems; ideal-switch time-domain simulations; semiconductor losses; switching energy loss; Computational efficiency; Computational modeling; Insulated gate bipolar transistors; Inverters; Power system modeling; Semiconductor diodes; Switching frequency; Switching loss; Time domain analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electric Machines and Drives, 2005 IEEE International Conference on
Conference_Location :
San Antonio, TX
Print_ISBN :
0-7803-8987-5
Electronic_ISBN :
0-7803-8988-3
Type :
conf
DOI :
10.1109/IEMDC.2005.195835
Filename :
1531453
Link To Document :
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