Title :
A MESFET capacitance model for low-drain voltage operation
Author :
Lan, Y.E. ; Wei, C.J. ; Hwang, J. C M
Abstract :
A new capacitance model for GaAs MESFETs suitable for bwdrain voltage operation is presented. The model includes, in addition to gate-bias dependence, drain-bias dependence of gate-source and gate-drain capacitances. The modeled capacitance values compare well with that extracted from measured S-parameters. The model bas been incorporated in a harmonic-balance commercial simulator, and the simulated MESFET power performance is in good agreement with measured data.
Keywords :
Capacitance measurement; Data mining; Diodes; Gallium arsenide; Linearity; MESFETs; Power measurement; Power system modeling; Scattering parameters; Voltage;
Conference_Titel :
Sarnoff Symposium, 1995., IEEE Princeton Section
Conference_Location :
Princeton, NJ, USA
DOI :
10.1109/SARNOF.1995.636684
