Title :
Quantifying yield impact of polishing induced defect on the silicon surface
Author :
Ohta, Hideo ; Moon, Byeong Sam ; Jea Gun Park ; Hyun Lee, Sang ; Hoon An, Jeong ; Hong, Kwon ; Watanabe, Tetsuya ; Ichinose, Katsuhiko ; Nemoto, Kazunori ; Ki Park, Sung
Author_Institution :
Semicond. Equip. Bus. Group, Hitachi High-Technol. Corp., Tokyo, Japan
Abstract :
The impact of PIDs on device yield was evaluated by detecting PIDs and performing a correlation analysis between the PID detection results and device yield of a probing test. It was consequently confirmed that PID can be detected sensitively with suitable wafer-surface inspection and SEM tools. It was also confirmed that PID correlates with device yield and that gate-dielectric defects are caused by PIDs. It is concluded that the PID is key factor in improving device yield, and we showed superior detection technology of PID.
Keywords :
elemental semiconductors; flaw detection; inspection; polishing; scanning electron microscopy; silicon; SEM tools; Si; gate-dielectric defects; polishing induced defect; wafer-surface inspection; yield impact; Inspection; Light scattering; Moon; Nanotechnology; Particle scattering; Performance evaluation; Semiconductor materials; Shape; Silicon; Virtual manufacturing; AFM; Defect Inspection; Defect Review; EDS; Laser; PID; Polishing; SEM; Scattering; Silicon Wafer; Simulation; TEM; Yield;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-3614-9
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2009.5155950
