DocumentCode
2400529
Title
Passive MESFET Limiters For Wireless Applications
Author
Buchinsky, Charles E. ; Katz, Allen
fYear
1995
fDate
28-28 April 1995
Abstract
The ability to sharply limit power level while maintaining a negligible change in phase is important in many wireless communications systems. This paper investigates the use of a passive MESFET device as a power limiter for the UHF and lower microwave frequency range. The S-parameters of a commercial grade GaAs FET were measured as a function of power level and used to develop a model. From the model a limiter circuit was designed, fabricated and tested. The resulting limiter employed two FETs in cascade, and produced a near ideal transfer characteristic over more than a two decade power range with less than a 15 degree change in phase.
Keywords
Circuit testing; Educational institutions; FETs; Gallium arsenide; MESFETs; Nonlinear distortion; Power measurement; Power system modeling; Production; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Sarnoff Symposium, 1995., IEEE Princeton Section
Conference_Location
Princeton, NJ, USA
Type
conf
DOI
10.1109/SARNOF.1995.636702
Filename
636702
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