• DocumentCode
    2400529
  • Title

    Passive MESFET Limiters For Wireless Applications

  • Author

    Buchinsky, Charles E. ; Katz, Allen

  • fYear
    1995
  • fDate
    28-28 April 1995
  • Abstract
    The ability to sharply limit power level while maintaining a negligible change in phase is important in many wireless communications systems. This paper investigates the use of a passive MESFET device as a power limiter for the UHF and lower microwave frequency range. The S-parameters of a commercial grade GaAs FET were measured as a function of power level and used to develop a model. From the model a limiter circuit was designed, fabricated and tested. The resulting limiter employed two FETs in cascade, and produced a near ideal transfer characteristic over more than a two decade power range with less than a 15 degree change in phase.
  • Keywords
    Circuit testing; Educational institutions; FETs; Gallium arsenide; MESFETs; Nonlinear distortion; Power measurement; Power system modeling; Production; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sarnoff Symposium, 1995., IEEE Princeton Section
  • Conference_Location
    Princeton, NJ, USA
  • Type

    conf

  • DOI
    10.1109/SARNOF.1995.636702
  • Filename
    636702