DocumentCode :
240067
Title :
Distortion analysis of nano-scale CMOS RF amplifier using Volterra series
Author :
Yu Haoran ; El-Sankary, Kamal ; El-Masry, Ezz
Author_Institution :
Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada
fYear :
2014
fDate :
4-7 May 2014
Firstpage :
1
Lastpage :
6
Abstract :
The distortion analysis of nano-scale (65nm) CMOS RF amplifier is presented based on Volterra series. The first three-order Volterra kernels are computed; and compact closed-form expressions of the second-order and third-order harmonic distortion (HD) are derived. These expressions give good accuracy comparing with the simulation results, and can provide insight of the nonlinearity of nano-scale amplifier. These expressions unveil and demonstrate that the nano-scale MOSFET has distinct nonlinear characteristics. Also, distortion-aware design guidelines for nano-meter CMOS amplifier are provided throughout the paper.
Keywords :
CMOS analogue integrated circuits; MOSFET; MOSFET circuits; Volterra series; harmonic distortion; nanoelectronics; radiofrequency amplifiers; radiofrequency integrated circuits; MOSFET; Volterra kernels; Volterra series; distortion analysis; nanoscale CMOS RF amplifier; second-order harmonic distortion; size 65 nm; third-order harmonic distortion; CMOS integrated circuits; High definition video; Radio frequency; Rail to rail outputs; Volterra series; amplifier; harmonic distortion (HD); nano-scale CMOS; nonlinearity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering (CCECE), 2014 IEEE 27th Canadian Conference on
Conference_Location :
Toronto, ON
ISSN :
0840-7789
Print_ISBN :
978-1-4799-3099-9
Type :
conf
DOI :
10.1109/CCECE.2014.6901010
Filename :
6901010
Link To Document :
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