Distortion analysis of nano-scale CMOS RF amplifier using Volterra series

Author

Yu Haoran ; El-Sankary, Kamal ; El-Masry, Ezz

Author_Institution

Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada

fYear

2014

fDate

4-7 May 2014

Firstpage

1

Lastpage

6

Abstract

The distortion analysis of nano-scale (65nm) CMOS RF amplifier is presented based on Volterra series. The first three-order Volterra kernels are computed; and compact closed-form expressions of the second-order and third-order harmonic distortion (HD) are derived. These expressions give good accuracy comparing with the simulation results, and can provide insight of the nonlinearity of nano-scale amplifier. These expressions unveil and demonstrate that the nano-scale MOSFET has distinct nonlinear characteristics. Also, distortion-aware design guidelines for nano-meter CMOS amplifier are provided throughout the paper.

Keywords

CMOS analogue integrated circuits; MOSFET; MOSFET circuits; Volterra series; harmonic distortion; nanoelectronics; radiofrequency amplifiers; radiofrequency integrated circuits; MOSFET; Volterra kernels; Volterra series; distortion analysis; nanoscale CMOS RF amplifier; second-order harmonic distortion; size 65 nm; third-order harmonic distortion; CMOS integrated circuits; High definition video; Radio frequency; Rail to rail outputs; Volterra series; amplifier; harmonic distortion (HD); nano-scale CMOS; nonlinearity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (CCECE), 2014 IEEE 27th Canadian Conference on

Conference_Location

Toronto, ON

ISSN

0840-7789

Print_ISBN

978-1-4799-3099-9

Type

conf

DOI

10.1109/CCECE.2014.6901010

Filename

6901010