Title :
35-GHz modulation bandwidth in injection-locked semiconductor lasers
Author :
Hwang, S.K. ; Liu, J.M. ; White, J.K.
Author_Institution :
Graduate Inst. of Opto-Mechatronics, Nat. Chung Cheng Univ., Taiwan, China
Abstract :
In this study, we experimentally demonstrate that, by using the injection locking method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is achieved in 1.3-μm DFB lasers. In this experimental the output of the master laser is used to injection lock the slave laser, and that of the slave laser is sent to a detection system to measure optical and power spectra. Power spectra are obtained by using a photodiode and by displaying the signal on a microwave spectrum analyzer. Optical spectra are taken by using a scanning Fabry-Perot interferometer. At bias current level, the intrinsic parameters of the slave laser are experimentally determined by using the four-wave mixing method. The enhancement in the modulation bandwidth is more than two folds.
Keywords :
Fabry-Perot interferometers; distributed feedback lasers; laser mode locking; multiwave mixing; optical modulation; photodiodes; spectral analysers; 1.3 micron; 35 GHz; DFB laser; electrical parasitic-free effect; four-wave mixing; injection locking method; injection-locked semiconductor laser; master laser; microwave spectrum analyzer; modulation bandwidth; optical spectra; photodiode; power spectra; probe laser; scanning Fabry-Perot interferometer; slave laser; Bandwidth; Injection-locked oscillators; Masers; Master-slave; Nonlinear optics; Optical interferometry; Optical mixing; Optical modulation; Power lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1252998
