35-GHz modulation bandwidth in injection-locked semiconductor lasers

Author

Hwang, S.K. ; Liu, J.M. ; White, J.K.

Author_Institution

Graduate Inst. of Opto-Mechatronics, Nat. Chung Cheng Univ., Taiwan, China

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

710

Abstract

In this study, we experimentally demonstrate that, by using the injection locking method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is achieved in 1.3-μm DFB lasers. In this experimental the output of the master laser is used to injection lock the slave laser, and that of the slave laser is sent to a detection system to measure optical and power spectra. Power spectra are obtained by using a photodiode and by displaying the signal on a microwave spectrum analyzer. Optical spectra are taken by using a scanning Fabry-Perot interferometer. At bias current level, the intrinsic parameters of the slave laser are experimentally determined by using the four-wave mixing method. The enhancement in the modulation bandwidth is more than two folds.

Keywords

Fabry-Perot interferometers; distributed feedback lasers; laser mode locking; multiwave mixing; optical modulation; photodiodes; spectral analysers; 1.3 micron; 35 GHz; DFB laser; electrical parasitic-free effect; four-wave mixing; injection locking method; injection-locked semiconductor laser; master laser; microwave spectrum analyzer; modulation bandwidth; optical spectra; photodiode; power spectra; probe laser; scanning Fabry-Perot interferometer; slave laser; Bandwidth; Injection-locked oscillators; Masers; Master-slave; Nonlinear optics; Optical interferometry; Optical mixing; Optical modulation; Power lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1252998

Filename

1252998