Virtual metrology for plasma etch using tool variables

Author

Lynn, Shane ; Ringwood, John ; Ragnoli, Emanuele ; McLoone, Sean ; MacGearail, Niall

Author_Institution

Dept. of Electron. Eng., Nat. Univ. of Ireland, Maynooth, Ireland

fYear

2009

fDate

10-12 May 2009

Firstpage

143

Lastpage

148

Abstract

This paper presents work carried out with data from an industrial plasma etch process. Etch tool parameters, available during wafer processing time, are used to predict wafer etch rate. These parameters include variables such as power, pressure, temperature, and RF measurement. A number of variable selection techniques are examined, and a novel piecewise modelling effort is discussed. The achievable accuracy and complexity trade-offs of plasma etch modelling are discussed in detail.

Keywords

plasma materials processing; sputter etching; RF measurement; etch tool parameters; industrial plasma etch process; piecewise modelling effort; power measurement; pressure measurement; temperature measurement; virtual metrology; wafer etch rate; wafer processing time; Etching; Metrology; Plasma applications; Plasma materials processing; Plasma measurements; Plasma temperature; Power measurement; Radio frequency; Semiconductor device modeling; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI

Conference_Location

Berlin

ISSN

1078-8743

Print_ISBN

978-1-4244-3614-9

Electronic_ISBN

1078-8743

Type

conf

DOI

10.1109/ASMC.2009.5155972

Filename

5155972