DocumentCode
2400984
Title
Novel in-line inspection method for non-visual defects and charging
Author
Höppner, K. ; Manuwald, R. ; Fahr, T. ; Zschech, E. ; Tamayo, N. ; Hickson, J. ; Adrian, B. ; Newcomb, R.
Author_Institution
AMD Fab36 LLC & Co. KG, Dresden, Germany
fYear
2009
fDate
10-12 May 2009
Firstpage
178
Lastpage
183
Abstract
Surface potential difference (SPD) measurements have shown to be effective in in-line characterizing charging non-uniformity and non-visual residues for both process and tool development but also in in-line characterizing properties of ultra thin transistor work function layers.
Keywords
CMOS integrated circuits; inspection; integrated circuit measurement; semiconductor industry; transistors; in-line inspection method; next-generation CMOS technology; nonvisual defect; semiconductor industry; surface potential difference measurement; ultra thin transistor; Capacitance; Chemical technology; Inspection; Monitoring; Pollution measurement; Probes; Surface charging; Surface contamination; Surface topography; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI
Conference_Location
Berlin
ISSN
1078-8743
Print_ISBN
978-1-4244-3614-9
Electronic_ISBN
1078-8743
Type
conf
DOI
10.1109/ASMC.2009.5155979
Filename
5155979
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