• DocumentCode
    2401130
  • Title

    Novel SEM based imaging using secondary electron spectrometer for enhanced voltage contrast and bottom layer defect review

  • Author

    Avinun-Kalish, Michal ; Sagy, Omer ; Im, Seong Moon ; Lee, ChangHwan ; Oh, Jaehyoung ; Lim, Jungyeon ; Kim, ChulHong ; Yoo, HyungWon

  • Author_Institution
    Appl. Mater., Rehovot, Israel
  • fYear
    2009
  • fDate
    10-12 May 2009
  • Firstpage
    223
  • Lastpage
    227
  • Abstract
    The challenge of high quality SEM imaging of defects at the bottom of dense and high aspect ratio structures is addressed here. We present a method that leverages the natural voltage contrast developed along dense topographies, by amplifying the information from the bottom of dense structures, using a secondary electron spectrometric technique. This improves both the detection limits and the defect image quality helping to obtain the defect root cause.
  • Keywords
    flaw detection; scanning electron microscopy; secondary electron emission; aspect ratio; bottom layer; defects; dense topographies; enhanced voltage contrast; high quality SEM imaging; image quality; secondary electron spectrometer; Conducting materials; Electron beams; Electron emission; Image quality; Moon; Scattering; Semiconductor materials; Spectroscopy; Surface topography; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI
  • Conference_Location
    Berlin
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4244-3614-9
  • Electronic_ISBN
    1078-8743
  • Type

    conf

  • DOI
    10.1109/ASMC.2009.5155988
  • Filename
    5155988