DocumentCode
2401130
Title
Novel SEM based imaging using secondary electron spectrometer for enhanced voltage contrast and bottom layer defect review
Author
Avinun-Kalish, Michal ; Sagy, Omer ; Im, Seong Moon ; Lee, ChangHwan ; Oh, Jaehyoung ; Lim, Jungyeon ; Kim, ChulHong ; Yoo, HyungWon
Author_Institution
Appl. Mater., Rehovot, Israel
fYear
2009
fDate
10-12 May 2009
Firstpage
223
Lastpage
227
Abstract
The challenge of high quality SEM imaging of defects at the bottom of dense and high aspect ratio structures is addressed here. We present a method that leverages the natural voltage contrast developed along dense topographies, by amplifying the information from the bottom of dense structures, using a secondary electron spectrometric technique. This improves both the detection limits and the defect image quality helping to obtain the defect root cause.
Keywords
flaw detection; scanning electron microscopy; secondary electron emission; aspect ratio; bottom layer; defects; dense topographies; enhanced voltage contrast; high quality SEM imaging; image quality; secondary electron spectrometer; Conducting materials; Electron beams; Electron emission; Image quality; Moon; Scattering; Semiconductor materials; Spectroscopy; Surface topography; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI
Conference_Location
Berlin
ISSN
1078-8743
Print_ISBN
978-1-4244-3614-9
Electronic_ISBN
1078-8743
Type
conf
DOI
10.1109/ASMC.2009.5155988
Filename
5155988
Link To Document