DocumentCode :
2401136
Title :
Focus and CD control by scatterometry measurements for 65/45nm node devices
Author :
Kawachi, Toshihide ; Fudo, Hidekimi ; Yamashita, Shigenori ; Yamamoto, Keizo ; Narimatsu, Koichiro ; Matsumoto, Shunichi ; Miwa, Toshiharu
Author_Institution :
Renesas Technol. Corp., Hitachinaka, China
fYear :
2009
fDate :
10-12 May 2009
Firstpage :
228
Lastpage :
231
Abstract :
Focus and CD simultaneous control method using scatterometry has been developed. Our focus and CD measurement technique consists of five layers scatterometry model that achieves the stable focus measurement at the exposure dose fluctuation. We utilize this feature and consider applying to the RSM (Response Surface Method) model for the focus and CD control. This control realizes a focus optimization and calculates the correct dose allowed for the focus effect. We´ve confirmed this method realizing high accuracy PR (Photo Resist) shape control and obtaining the CD variation reduction effect to 1/5 at the 65nm device.
Keywords :
photoresists; process control; semiconductor device measurement; shape control; spatial variables measurement; CD simultaneous control method; critical dimension variation reduction effect; focus optimization; lithography process; photo resist shape control; production control; response surface method model; scatterometry measurement; size 45 nm; size 65 nm; Cities and towns; Fluctuations; Measurement techniques; Numerical analysis; Production; Radar measurements; Resists; Response surface methodology; Semiconductor device modeling; Shape;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI
Conference_Location :
Berlin
ISSN :
1078-8743
Print_ISBN :
978-1-4244-3614-9
Electronic_ISBN :
1078-8743
Type :
conf
DOI :
10.1109/ASMC.2009.5155989
Filename :
5155989
Link To Document :
بازگشت