Focus and CD control by scatterometry measurements for 65/45nm node devices

Author

Kawachi, Toshihide ; Fudo, Hidekimi ; Yamashita, Shigenori ; Yamamoto, Keizo ; Narimatsu, Koichiro ; Matsumoto, Shunichi ; Miwa, Toshiharu

Author_Institution

Renesas Technol. Corp., Hitachinaka, China

fYear

2009

fDate

10-12 May 2009

Firstpage

228

Lastpage

231

Abstract

Focus and CD simultaneous control method using scatterometry has been developed. Our focus and CD measurement technique consists of five layers scatterometry model that achieves the stable focus measurement at the exposure dose fluctuation. We utilize this feature and consider applying to the RSM (Response Surface Method) model for the focus and CD control. This control realizes a focus optimization and calculates the correct dose allowed for the focus effect. We´ve confirmed this method realizing high accuracy PR (Photo Resist) shape control and obtaining the CD variation reduction effect to 1/5 at the 65nm device.

Keywords

photoresists; process control; semiconductor device measurement; shape control; spatial variables measurement; CD simultaneous control method; critical dimension variation reduction effect; focus optimization; lithography process; photo resist shape control; production control; response surface method model; scatterometry measurement; size 45 nm; size 65 nm; Cities and towns; Fluctuations; Measurement techniques; Numerical analysis; Production; Radar measurements; Resists; Response surface methodology; Semiconductor device modeling; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI

Conference_Location

Berlin

ISSN

1078-8743

Print_ISBN

978-1-4244-3614-9

Electronic_ISBN

1078-8743

Type

conf

DOI

10.1109/ASMC.2009.5155989

Filename

5155989