Title :
Defect reduction in ArF immersion lithography, using particle trap wafers with CVD thin films
Author :
Matsui, Yoshinori ; Onoda, Naka ; Nagahara, Seiji ; Uchiyama, Takayuki
Author_Institution :
NEC Electron. Corp., Sagamihara, Japan
Abstract :
Particle trap wafers were applied to ArF immersion lithography to reduce the immersion related defectivity. Interfacial free energy (gamma) and work of adhesion (W) between particle trap wafers and particles in immersion water explain the potential of trapping particles by the particle trap wafers. It was also found that the treated SiCN CVD wafer performed well as a particle trap wafer and may help defect reduction in immersion lithography.
Keywords :
CVD coatings; argon compounds; free energy; immersion lithography; silicon compounds; surface energy; ArF; CVD thin films; CVD wafer; SiCN; defect reduction; immersion lithography; immersion water; interfacial free energy; particle trap wafers; trapping particle potential; Cleaning; Electron traps; Equations; Goniometers; Lithography; Particle measurements; Pollution measurement; Resists; Testing; Transistors;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-3614-9
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2009.5155991
