Afterpulsing of single-photon avalanche photodetectors

Author

Kang, Y. ; Bethune, D.S. ; Risk, W.P. ; Lo, Y.-H.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

775

Abstract

In this work, an experiment was carried out by making use of the interleaved pulse measurement to investigate the afterpulsing effect of InGaAs/InP APD at different temperatures. The primary dark current and detrap time as functions of temperature were obtained by fitting the experimental data. This work clearly reveals the impact of afterpulsing effect on the dark count rate, and an optimum operation temperature for low dark count was observed for InGaAs/InP APD photon counters.

Keywords

III-V semiconductors; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; photodetectors; photon counting; pulse measurement; radiation pressure; semiconductor device testing; APD photon counters; InGaAs-InP; afterpulsing effect; dark count rate; detrap time; interleaved pulse measurement; optimum operation temperature; primary dark current; single-photon avalanche photodetectors; Avalanche breakdown; Counting circuits; Dark current; Optical pulse generation; Optical pulses; Photodetectors; Pulse generation; Pulse measurements; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1253029

Filename

1253029