Variations in the photon-counting performance of InGaAs/InP avalanche photodiodes

Author

Forsyth, Keith ; Dries, J. Christopher

Author_Institution

Sensors Unlimited Inc., Princeton, NJ, USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Abstract

Summary form only given. In this paper we present new data on the photon-counting performance of a number of commercial APDs, designed for linear operation in data communications applications at 2.5 Gb/sec. These data include dark count rate, quantum efficiency, and jitter, as well as the variation of these parameters with temperature and bias voltage. We show that current InGaAs/InP APDs of the appropriate design are well suited to many practical applications of single-photon counting in the 1.0 to 1.6 μm wavelength band.

Keywords

III-V semiconductors; avalanche photodiodes; dark conductivity; data communication equipment; gallium arsenide; indium compounds; jitter; photon counting; 1.0 to 1.6 micron; 2.5 Gbit/s; APD; InGaAs-InP; avalanche photodiodes linear operation; bias voltage; dark count rate; data communications applications; jitter; photon-counting performance; quantum efficiency; Avalanche photodiodes; Data analysis; Data communication; Indium gallium arsenide; Indium phosphide; Jitter; Optical sensors; Optoelectronic and photonic sensors; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1253030

Filename

1253030