Title :
Variations in the photon-counting performance of InGaAs/InP avalanche photodiodes
Author :
Forsyth, Keith ; Dries, J. Christopher
Author_Institution :
Sensors Unlimited Inc., Princeton, NJ, USA
Abstract :
Summary form only given. In this paper we present new data on the photon-counting performance of a number of commercial APDs, designed for linear operation in data communications applications at 2.5 Gb/sec. These data include dark count rate, quantum efficiency, and jitter, as well as the variation of these parameters with temperature and bias voltage. We show that current InGaAs/InP APDs of the appropriate design are well suited to many practical applications of single-photon counting in the 1.0 to 1.6 μm wavelength band.
Keywords :
III-V semiconductors; avalanche photodiodes; dark conductivity; data communication equipment; gallium arsenide; indium compounds; jitter; photon counting; 1.0 to 1.6 micron; 2.5 Gbit/s; APD; InGaAs-InP; avalanche photodiodes linear operation; bias voltage; dark count rate; data communications applications; jitter; photon-counting performance; quantum efficiency; Avalanche photodiodes; Data analysis; Data communication; Indium gallium arsenide; Indium phosphide; Jitter; Optical sensors; Optoelectronic and photonic sensors; Temperature; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253030
