Title :
High-saturation-current charge-compensated InGaAs/InP uni-traveling-carrier photodiode
Author :
Li, Ning ; Li, Xin ; Demiguel, S. ; Zheng, Xiaoquan ; Campbell, Joe C. ; Tulchinsky, D.A. ; Williams, Keith J. ; Isshiki, T.D. ; Kinsey, Geoffrey S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
In this paper a high-saturation-current charge-compensated InGaAs/InP uni-traveling-carrier photodiode with charge compensated collector layer is demonstrated. A 16 μm diameter photodiode has demonstrated an output current of 80 mA and a bandwidth of 30 GHz.
Keywords :
III-V semiconductors; charge compensation; gallium arsenide; indium compounds; photodetectors; photodiodes; 16 micron; 30 GHz; 80 mA; InGaAs-InP; charge compensated collector layer; high-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode; photodiode; Doping; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical saturation; Optical scattering; Photodiodes; Radio frequency; Space charge; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253037
