Integrated EA modulators for ultrahigh-capacity communications

Author

Saitoh, Tadashi ; Yasaka, Hiroshi

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

820

Abstract

This paper describes a multichannel modulator consisting of EAMs, an arrayed waveguide grating, and semiconductor optical amplifiers. The modulator achieves 2.5-Gb/s operation and low optical and electrical crosstalk. For a solitary high-speed 50-μm-long EAM buried with ruthenium-doped semiinsulating-InP, the extrapolated 3-dB-down electrical bandwidth is as large as 80 GHz. Small-signal E/O response with 3-dB-down electrical bandwidth of over 50 GHz is demonstrated.

Keywords

III-V semiconductors; arrayed waveguide gratings; electro-optical modulation; electroabsorption; high-speed optical techniques; indium compounds; integrated optics; monolithic integrated circuits; optical communication equipment; optical crosstalk; ruthenium; semiconductor optical amplifiers; wavelength division multiplexing; 2.5 Gbit/s; 50 micron; InP:Ru; arrayed waveguide grating; electrical bandwidth; electrical crosstalk; integrated electroabsorption modulators; multichannel modulator; optical crosstalk; ruthenium-doped semiinsulating-InP; semiconductor optical amplifiers; small-signal EO response; ultrahigh-capacity communications; Arrayed waveguide gratings; Bandwidth; High speed optical techniques; Optical arrays; Optical crosstalk; Optical modulation; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1253052

Filename

1253052