Title :
Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers
Author :
Oh, Jungwoo ; Banerjee, Sanjay K. ; Campbell, Joe C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In this paper, we report a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si substrate. The Ge epitaxial layers were grown using a cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) system. The bandwidths reported here are the highest for Ge photodetectors on Si substrate at 1.3 μm.
Keywords :
Schottky barriers; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; germanium; metal-semiconductor-metal structures; optical fabrication; photodetectors; semiconductor epitaxial layers; silicon; substrates; vacuum deposition; 1.3 micron; Ag-Ge-Ag; Ge epitaxial layer; Si; Si substrate; Si-Ge; UHV-CVD; amorphous Ge Schottky barrier enhancement layer; cold wall ultrahigh vacuum chemical vapor deposition system; heteroepitaxial Ge-on-Si; metal-germanium-metal photodetector; Amorphous materials; Bandwidth; Buffer layers; Dark current; Epitaxial layers; Optical interconnections; Photodetectors; Photonic integrated circuits; Schottky barriers; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253070
