Title :
Spectroscopic studies of GaN:Er, GaN:Eu, and GaN/AlGaN:Tm prepared by solid-source molecular beam epitaxy
Author :
Nyein, E.E. ; Hommerich, U. ; Steckl, A.J. ; Lee, David S.
Author_Institution :
Dept. of Phys., Hampton Univ., VA, USA
Abstract :
In this paper, we report on recent studies of the photoluminescence (PL) properties of GaN:Er, GaN:Eu, and GaN/AlGaN:Tm thin films prepared by solid-source molecular beam epitaxy. The most intense visible PL is observed from GaN:Eu (red: 622 nm) followed by GaN:Er (green: 537 nm, 558 nm), and then GaN:Tm (blue: 479 nm).
Keywords :
aluminium compounds; erbium; europium; gallium compounds; molecular beam epitaxial growth; optical films; photoluminescence; thin films; thulium; visible spectroscopy; 479 nm; 537 nm; 558 nm; 622 nm; GaN-AlGaN:Tm; GaN:Er; GaN:Eu; intense visible photoluminescence property; solid-source molecular beam epitaxy; spectroscopic study; thin film; Artificial intelligence; Erbium; Gallium nitride; Laboratories; Laser excitation; Molecular beam epitaxial growth; Nanoelectronics; Physics; Spectroscopy; Transistors;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253081
