DocumentCode
2402139
Title
Piezoelectric field effects in InGaN quantum wells
Author
Brown, I.H. ; Pope, Iestyn A. ; Smowton, Peter M. ; Blood, Peter ; Thomson, John D. ; Chow, Weng W.
Author_Institution
Dept. of Phys. & Astron., Cardiff Univ., UK
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
880
Abstract
We have measured piezoelectric fields in p-i-n LED structures using the quantum confined Stark effect and photocurrent absorption. The results agree with calculations of the absorption where material parameters are interpolated from the binaries.
Keywords
indium compounds; interpolation; light emitting diodes; optical materials; p-i-n diodes; photoconductivity; photoemission; piezo-optical effects; piezoelectricity; quantum confined Stark effect; semiconductor quantum wells; InGaN; InGaN quantum wells; interpolation; material parameter; p-i-n LED structures; photocurrent absorption; piezoelectric field effect; quantum confined Stark effect; Absorption; Blood; Indium; Optical materials; PIN photodiodes; Photoconductivity; Potential well; Semiconductor materials; Stark effect; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253083
Filename
1253083
Link To Document